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MKS designs and manufactures RF torroidal plasma sources to energize and dissociate gases. Fluorine based gases such as NF3 are used to clean unwanted deposits from the walls of vacuum process chambers. Plasma sources for process chemistries include oxygen, nitrogen, and hydrogen.
Plasma sources for NF3 and fluorine-based gases are a remote source for reactive gas to clean undesired deposits from interior walls of thin film deposition process chambers. By generating atomic fluorine that reacts with waste deposits in the chamber, new gases are formed that are readily scrubbed to minimize the environmental impact. In addition, the remote source reduces wear and tear on the process chamber as compared to in-situ RF methods.
Plasma is an ionized gas essential in many processes such as photo-resist removal, wafer pre-clean, and thin film nitridation and oxidation. MKS designs and develops RF and microwave powered remote and in-situ sources for generation of oxygen, nitrogen, hydrogen and water vapor plasmas.
